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RTF015P02
Transistors
Absolute maximum ratings (Ta=25 ° C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S ? 1
I SP
± 1.5
± 6
? 0.6
? 6
A
A
A
A
Total power dissipation
Channel temperature
Range of Storage temperature
P D ? 2
Tch
Tstg
0.8
150
? 55 to + 150
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 12V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 20
?
?
V
I D = ? 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
?
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r ?
t d (off) ?
t f ?
?
? 0.7
?
?
?
1.5
?
?
?
?
?
?
?
?
?
100
110
180
?
560
90
55
12
12
38
12
? 1
? 2.0
135
150
250
?
?
?
?
?
?
?
?
μ A
V
m ?
m ?
m ?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 20V, V GS =0V
V DS = ? 10V, I D = ? 1mA
I D = ? 1.5A, V GS = ? 4.5V
I D = ? 1.5A, V GS = ? 4V
I D = ? 1.5A, V GS = ? 2.5V
V DS = ? 10V, I D = ? 0.8A
V DS = ? 10V
V GS =0V
f=1MHz
I D = ? 0.8A
V DD ? 15V
V GS = ? 4.5V
R L =9 ?
R GS =10 ?
Total gate charge
Q g
?
5.2
?
nC
V DD
? 15V
R L 10 ?
Gate-source charge
Gate-drain charge
Q gs
Q gd
?
?
1.3
1.4
?
?
nC
nC
V GS = ? 4.5V
I D = ? 1.5A
R GS =10 ?
? Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD
? ? ? 1.2
V
I S = ? 0.6A, V GS =0V
2/4
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